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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1816
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION The µPA1816 is a switching device which can be
driven directly by a 1.8 V power source. This device features a low on-state resistance and
excellent switching characteristics, and is suitable for applications such as power management of notebook computers and so on.
FEATURES • 1.8 V drive available • Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = −4.5 V, ID = −4.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −4.5 A) RDS(on)3 = 22.5 mΩ MAX. (VGS = −2.5 V, ID = −4.5 A) RDS(on)4 = 41.5 mΩ MAX. (VGS = −1.8 V, ID = −2.5 A) • Built-in G-S protection diode against ESD
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
1.2 MAX. 1.0 ±0.05
0.
UPA1816 Datasheet
