UPA1816 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1816 is a switching device which can be driven directly by a 1.8 V power source. This device Features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of notebook puters and so on. Features - 1.8 V drive available - Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = - 4.5 V, ID = - 4.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = - 4.0 V, ID = - 4.5 A) RDS(on)3 = 22.5 mΩ MAX. (VGS = - 2.5 V, ID = - 4.5 A) RDS(on)4 = 41.5 mΩ MAX. (VGS = - 1.8 V, ID = - 2.5 A) - Built-in G-S protection diode against ESD PACKAGE...