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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1812
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1812 is a switching device which can be driven directly by a 4.0-V power source. The µPA1812 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit : mm)
5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate
1.2 MAX. 1.0±0.05 0.25
° 3° +5 –3°
FEATURES •
• Can be driven by a 4.0-V power source • Low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = –10 V, ID = –2.5 A) RDS(on)2 = 63 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)3 = 69 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
1 4
0.1±0.05
0.5 0.6 +0.15 –0.1
0.145 ±0.055
3.15 ±0.15 3.0 ±0.1
6.4 ±0.2 4.