Datasheet4U Logo Datasheet4U.com

UPA1815 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The µPA1815 is a switching device which can be driven directly by a 2.5-V power source.

Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

📥 Download Datasheet

Datasheet preview – UPA1815

Datasheet Details

Part number UPA1815
Manufacturer NEC
File Size 68.71 KB
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA1815 Datasheet
Additional preview pages of the UPA1815 datasheet.

📁 Similar Datasheet

  • UPA1855 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR (Renesas)
  • UPA1572 - N-CHANNEL POWER MOS FET ARRAY SWITCHING TYPE (Renesas)
  • UPA1708G - N-Channel 40V MOSFET (VBsemi)
  • UPA1A102MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A103MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A122MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A152MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A182MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A222MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
  • UPA1A272MPD - ALUMINUM ELECTROLYTIC CAPACITORS (Nichicon)
Other Datasheets by NEC
  • UPA1810 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • UPA1811 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • UPA1812 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • UPA1813 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • UPA1814 - P-CHANNEL MOS FIELD EFFECT TRANSISTOR
  • UPA1816 - MOS FIELD EFFECT TRANSISTOR
  • UPA1800 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
  • UPA1801 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit : mm) 5 1, 5, 8 : Drain 2, 3, 6, 7: Source 4 : Gate 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A) RDS(on)2 = 16 mΩ MAX. (VGS = –4.0 V, ID = –3.5 A) RDS(on)3 = 19 mΩ MAX. (VGS = –3.3 V, ID = –3.5 A) RDS(on)4 = 23 mΩ MAX. (VGS = –2.5 V, ID = –3.5 A) 1 4 0.1±0.05 0.5 0.6 +0.15 –0.
Published: |