Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA1857
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The µPA1857 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
8
PACKAGE DRAWING (Unit: mm)
5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2
1.2 MAX. 1.0±0.05 0.25
° 3° +5 –3°
FEATURES
• Low on-state resistance RDS(on)1 = 67.0 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 86.0 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)3 = 95.0 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) • Low Ciss Ciss = 580 pF TYP. • Built-in G-S protection diode against ESD
0.1±0.05 1 4
0.5 0.6 +0.15 –0.1
0.145 ±0.055
3.15 ±0.15 3.0 ±0.1
6.4 ±0.2 4.4 ±0.1 1.0 ±0.