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UPA1857 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

General Description

The µPA1857

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1857 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1857 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. 8 PACKAGE DRAWING (Unit: mm) 5 1 2, 3 4 5 6, 7 8 :Drain1 :Source1 :Gate1 :Gate2 :Source2 :Drain2 1.2 MAX. 1.0±0.05 0.25 ° 3° +5 –3° FEATURES • Low on-state resistance RDS(on)1 = 67.0 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 86.0 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A) RDS(on)3 = 95.0 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A) • Low Ciss Ciss = 580 pF TYP. • Built-in G-S protection diode against ESD 0.1±0.05 1 4 0.5 0.6 +0.15 –0.1 0.145 ±0.055 3.15 ±0.15 3.0 ±0.1 6.4 ±0.2 4.4 ±0.1 1.0 ±0.