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UPA1855 - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

driven directly by a 2.5 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Datasheet Details

Part number UPA1855
Manufacturer Renesas
File Size 114.99 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA1855 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1855 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The µPA1855 is a switching device which can be driven directly by a 2.5 V power source. The µPA1855 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 2.5 V power source • Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 24 mΩ MAX. (VGS = 4.0 V, ID = 3.0 A) RDS(on)3 = 29 mΩ MAX. (VGS = 2.5 V, ID = 3.0 A) • Built-in G-S protection diode against ESD ORDERING INFORMATION PART NUMBER PACKAGE PACKAGE DRAWING (Unit : mm) 85 1 :Drain1 2, 3 :Source1 4 :Gate1 5 :Gate2 6, 7 :Source2 8 :Drain2 1.2 MAX. 1.0±0.