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UPA2724UT1A - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The μ PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications.

0.05

Features

  • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A).
  • Low input capacitance Ciss = 4400 pF TYP. (VDS = 15 V, VGS = 0 V).
  • Thin type surface mount package with heat spreader (8-pin HVSON).
  • RoHS Compliant.

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Datasheet Details

Part number UPA2724UT1A
Manufacturer NEC
File Size 178.91 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet UPA2724UT1A Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET 1.27OM 0.10CHIPSET-ICM DESCRIPTION PACKAGE DRAWING (Unit: mm) The μ PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. +0.1 C −0.05 FEATURES • Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A) • Low input capacitance Ciss = 4400 pF TYP. (VDS = 15 V, VGS = 0 V) • Thin type surface mount package with heat spreader (8-pin HVSON) • RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
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