UPA2701GR
DESCRIPTION
The µPA2701GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters.
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain
FEATURES
- Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
- Low Ciss: Ciss = 1200 p F TYP. (VDS = 10 V, VGS = 0 V)
- Small and surface mount package (Power SOP8)
4 5.37 MAX.
+0.10
- 0.05
6.0 ±0.3 4.4 0.8
1.8 MAX.
0.05 MIN.
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
0.5 ±0.2 0.10
1.27 0.78 MAX. 0.40
+0.10
- 0.05
µPA2701GR
0.12 M
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
30 ±20 ±14 ±56 2.0 150
- 55 to +150 14 19.6
V V A A W °C °C A m J
Gate Protection Diode Gate Body...
