UPA2701TP - SWITCHING N- AND P-CHANNEL POWER MOS FET
NEC (now Renesas Electronics)
General Description
The µPA2701TP, which has a heat spreader, is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers.
1.49 ±0.21 1.44 TYP.
0.2
4
6.0 ±0.3 0.8 ±0.2
+0.10
Key Features
Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A).
Full PDF Text Transcription for UPA2701TP (Reference)
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UPA2701TP. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2701TP SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The µPA2701TP, which has a heat spreader, is N-...
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(Unit: mm) DESCRIPTION The µPA2701TP, which has a heat spreader, is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. 1.49 ±0.21 1.44 TYP. 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 1 5.2 +0.17 –0.2 4 6.0 ±0.3 0.8 ±0.2 +0.10 –0.05 FEATURES • Low on-state resistance RDS(on)1 = 7.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 11.6 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A) • Low Ciss: Ciss = 1200 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) 4.4 ±0.15 S 0.05 ±0.05 0.15 1.27 TYP. 0.40 1 +0.10 –0.05 0.10 S 0.12 M 1.1 ±0.2
More Datasheets from NEC (now Renesas Electronics)
UPA2701TP Datasheet
