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UPA2707GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

Datasheet Summary

Description

The µ PA2707GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.

Features

  • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A).
  • Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V).
  • Small and surface mount package (Power SOP8) µ PA2707GR-E2 µ PA2707GR-E2-A Note Power SOP8 Note Pb-free (This product does not contain Pb in external electrode and other parts. ).

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Datasheet Details

Part number UPA2707GR
Manufacturer NEC
File Size 146.75 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet UPA2707GR Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2707GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2707GR is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 Note µ PA2707GR-E1 µ PA2707GR-E1-A Power SOP8 Power SOP8 FEATURES • Low on-state resistance RDS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) µ PA2707GR-E2 µ PA2707GR-E2-A Note Power SOP8 Note Pb-free (This product does not contain Pb in external electrode and other parts.) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.
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