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UPA2706GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

General Description

The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

Key Features

  • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A).
  • Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V).
  • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10.
  • 0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15.

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Full PDF Text Transcription for UPA2706GR (Reference)

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DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA2706GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC c...

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PA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) • Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 –0.05 6.0 ±0.3 4.4 0.8 1.8 MAX. 1.44 0.15 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 0.05 MIN. 0.5 ±0.2 0.10 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.