UPA2706GR Description
The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook puters.
UPA2706GR Key Features
- Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
- Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V)
- Small and surface mount package (Power SOP8)