UPA2706TP - SWITCHING N- AND P-CHANNEL POWER MOS FET
NEC (now Renesas Electronics)
General Description
The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.
Key Features
Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A).
Full PDF Text Transcription for UPA2706TP (Reference)
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UPA2706TP. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2706TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect T...
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µ PA2706TP, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 µ PA2706TP FEATURES • Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A) • Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, all terminals are connected.
More Datasheets from NEC (now Renesas Electronics)
UPA2706TP Datasheet
