UPA2708TP - SWITCHING N- AND P-CHANNEL POWER MOS FET
NEC (now Renesas Electronics)
General Description
The µ PA2708TP which has a heat spreader is Nchannel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.
Key Features
Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A).
Small and surface mount package (Power HSOP8)
µ PA2708TP-E2-AZ
Note
Power HSOP8
Note Pb-free (This product does not contain Pb in external electrode. ).
Full PDF Text Transcription for UPA2708TP (Reference)
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UPA2708TP. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2708TP SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The µ PA2708TP which has a heat spreader is Nchannel MOS Field Effect Tran...
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µ PA2708TP which has a heat spreader is Nchannel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer. ORDERING INFORMATION PART NUMBER PACKAGE Power HSOP8 Note µ PA2708TP-E1 µ PA2708TP-E1-AZ µ PA2708TP-E2 Power HSOP8 Power HSOP8 FEATURES • Low on-state resistance RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 9.0 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A) • Low Ciss: Ciss = 4700 pF TYP. (VDS = 10 V, VGS = 0 V) • Small and surface mount package (Power HSOP8) µ PA2708TP-E2-AZ Note Power HSOP8 Note Pb-free (This product does not contain Pb in external electrode.
More Datasheets from NEC (now Renesas Electronics)
UPA2708TP Datasheet
