UPA507TE Datasheet | NEC

DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA507TE P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA507TE is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which Features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 - 0.05 0.16+0.1 - 0.06 - 0.15 +0.1 2.8 ±0.2 0 to 0.1 1 2 3 Features - 1.8 V drive available (MOS FET) - Low on-state resistance (MOS FET) RDS(on)1 = 68 mΩ TYP. (VGS = - 4.5 V, ID = - 1.0 A) RDS(on)2 = 84 mΩ TYP. (VGS = - 2.5 V, ID = - 1.0 A) RDS(on)3 = 109 mΩ TYP. (VGS = - 1.8 V, ID = - 1.0 A) - Low forward voltage (Schottky barrier diode) VF = 0.35 V TYP. (IF = 1.0 A) 1.9 2.9 ±0.2 0.9 to 1.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-95_5p (Mini Mold Thin Type) ★ PIN CONNECTION (Top...