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UPA508TE - N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING

General Description

The µ PA508TE is a switching device, which can be driven directly by a 2.5 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 –0.05 0.16+0.1 –0.06 0.65 –0.15 +0.1 2.8 ±0.2 5 4 1.5 0 to 0.1 1 2 3 FEATURES • 2.5 V drive available (MOS FET) • Low on-state resistance (MOS FET) RDS(on)1 = 40 mΩ TYP. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 42 mΩ TYP. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 59 mΩ TYP.