UPA508TE Datasheet | NEC

DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE µ PA508TE N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The µ PA508TE is a switching device, which can be driven directly by a 2.5 V power source. This device incorporates a MOS FET, which Features a low on-state resistance and excellent switching characteristics, and a low forward voltage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 - 0.05 0.16+0.1 - 0.06 - 0.15 +0.1 2.8 ±0.2 0 to 0.1 1 2 3 Features - 2.5 V drive available (MOS FET) - Low on-state resistance (MOS FET) RDS(on)1 = 40 mΩ TYP. (VGS = 4.5 V, ID = 1.0 A) RDS(on)2 = 42 mΩ TYP. (VGS = 4.0 V, ID = 1.0 A) RDS(on)3 = 59 mΩ TYP. (VGS = 2.5 V, ID = 1.0 A) - Low forward voltage (Schottky barrier diode) VF = 0.35 V TYP. (IF = 1.0 A) 1.9 2.9 ±0.2 0.9 to 1.1 ORDERING INFORMATION PART NUMBER PACKAGE SC-95_5p (Mini Mold Thin Type) ★ PIN CONNECTION (Top View) 5 4 1: Gate 2: Source 3: Anode 4: Cathode 5: Drain µ PA508TE Marking: ZB Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD ± 150 V TYP. (C = 200 p F, R = 0 Ω, Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest...