Datasheet4U Logo Datasheet4U.com

UPA801TC - NPN Transistor

General Description

The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band.

Key Features

  • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • Flat-lead 6-pin thin-type ultra super minimold package.
  • Built-in 2 transistors (2 × 2SC5006).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPA801T NPN Transistor INCHANGE
UPA805T NPN Transistor INCHANGE
UPA806 NPN TRANSISTOR UTC
UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR CEL
UPA814T NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPA800T NPN Transistor
UPA800TF NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA802T NPN Transistor
UPA803T NPN Transistor
UPA804TC NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 × 2SC5006) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Supplying Form Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape.