UPA802T Description
PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.
UPA802T Key Features
- Low Noise
- High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
- A Mini Mold Package Adopted
- Built-in 2 Transistors (2 × 2SC4227)