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UPA821TC - NPN SILICON EPITAXIAL TWIN TRANSISTOR

Datasheet Summary

Description

The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band.

Features

  • Low noise: NF= 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • Flat-lead 6-pin thin-type ultra super minimold package.
  • Built-in 2 transistors (2 × 2SC5006).

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Datasheet Details

Part number UPA821TC
Manufacturer NEC
File Size 64.48 KB
Description NPN SILICON EPITAXIAL TWIN TRANSISTOR
Datasheet download datasheet UPA821TC Datasheet
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Full PDF Text Transcription

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DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 2 × 2SC5006) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band. FEATURES • Low noise: NF= 1.2 dB TYP.@ f = 1 GHz, VCE = 3 V, IC = 7 mA • High gain: IS21el2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • Flat-lead 6-pin thin-type ultra super minimold package • Built-in 2 transistors (2 × 2SC5006) ORDERING INFORMATION Part Number Package Flat-lead 6-pin thin-type ultra super minimold Quantity Loose products (50 pcs) Taping products (3 kp/reel) Supplying Form Embossed tape 8 mm wide.
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