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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
PPA828TF
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD
FEATURES
• Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 6-pin thin-type small mini mold package adopted • Built-in 2 transistors (2 u 2SC5184)
PACKAGE DRAWINGS (Unit: mm)
2.10±0.1 1.25±0.1
1.30
ORDERING INFORMATION
Part Number Quantity Loose products (50 pcs) Taping products (3 kpcs/reel) Packing Style
2.00±0.2
0.65
2
0.65
3
PPA828TF PPA828TF-T1
0.60±0.1
Remark If you require an evaluation sample, please contact an NEC Sales Representative (Unit sample quantity is 50 pcs).
UPA828TF Datasheet
