UPA828TF Overview
Key Features
- Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
- 6-pin thin-type small mini mold package adopted
| Part | UPA828TF |
|---|---|
| Description | HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR |
| Category | Transistor |
| Manufacturer | NEC |
| Size | 92.62 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| BDT88 | Inchange Semiconductor | Silicon PNP Power Transistor |
| KD333 | Tesla Elektronicke | Transistor |
| C828 | SEMTECH | NPN Silicon Transistor |