UPA835TC
UPA835TC is NPN SILICON EPITAXIAL TRANSISTOR manufactured by NEC.
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA835TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
DESCRIPTION
The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.
Features
- Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
- High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
- Flat-lead 6-pin thin-type ultra super minimold package
- Built-in 2 different transistors (2SC5010, 2SC5006)
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