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UPA835TC - NPN SILICON EPITAXIAL TRANSISTOR

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General Description

The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

Overview

DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA835TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD.

Key Features

  • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
  • Flat-lead 6-pin thin-type ultra super minimold package.
  • Built-in 2 different transistors (2SC5010, 2SC5006) BUILT-IN.

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