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UPA835TC - NPN SILICON EPITAXIAL TRANSISTOR

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NEC

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UPA835TC NPN SILICON EPITAXIAL TRANSISTOR by NEC - Datasheet Preview — Datasheet preview – UPA835TC

Datasheet Details

Part number	UPA835TC
Manufacturer	NEC
File Size	71.64 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR
Datasheet	UPA835TC Datasheet
Additional preview pages of the UPA835TC datasheet.

Product details

Description

The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

Features

Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA.
Flat-lead 6-pin thin-type ultra super minimold package.
Built-in 2 different transistors (2SC5010, 2SC5006) BUILT-IN.

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Published: Apr 17, 2005 |