UPC2763TB Overview
size, µPC2762TB, µPC2763TB and µPC2771TB are suitable to replace from µPC2762T, µPC2763T and µPC2771T. These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
UPC2763TB Key Features
- High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
- Supply voltage
- Medium output power : VCC = 2.7 to 3.3 V : µPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz
- Power gain : µPC2762TB: GP = 13 dB TYP. @ 0.9 GHz
UPC2763TB Applications
- Buffer amplifiers for mobile telephones : µPC2762TB, µPC2763TB
- PA driver for PDC800M : µPC2771TB