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UPC2771T - 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

General Description

The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process.

The NESAT III process produces transistors with fT approaching 20 GHz.

This amplifier was designed as a driver amplifier for digital cellular applications.

Key Features

  • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical.
  • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz Gain, GS (dB) UPC2771T GAIN vs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER FEATURES • HIGH GAIN: 20 dB at 900 to 1500 MHz Typical • HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz Gain, GS (dB) UPC2771T GAIN vs. FREQUENCY AND TEMPERATURE 24 TA = -40˚ C 22 • LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum • SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE 20 +85˚ C TA = +25˚ C TA = +85˚ C 18 16 DESCRIPTION The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt supply, this IC is ideally suited for hand-held, portable designs.