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UPC2771TB - 3 V/ SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

General Description

The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications.

Each of the ICs is packaged in super minimold package which is smaller than conventional minimold.

Key Features

  • High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm).
  • Supply voltage.
  • Medium output power : VCC = 2.7 to 3.3 V : µPC2762TB: PO(1 dB) = +8.0 dBm TYP. @ 0.9 GHz µPC2763TB: PO(1 dB) = +9.5 dBm TYP. @ 0.9 GHz µPC2771TB: PO(1 dB) = +11.5 dBm TYP. @ 0.9 GHz.
  • Power gain : µPC2762TB: GP = 13 dB TYP. @ 0.9 GHz µPC2763TB: GP = 20 dB TYP. @ 0.9 GHz µPC2771TB: GP = 21 dB TYP. @ 0.9 GHz.

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. Each of the ICs is packaged in super minimold package which is smaller than conventional minimold. The µPC2762TB, µPC2763TB and µPC2771TB have compatible pin connections and performance to µPC2762T, µPC2763T and µPC2771T of conventional minimold version. So, in the case of reducing your system size, µPC2762TB, µPC2763TB and µPC2771TB are suitable to replace from µPC2762T, µPC2763T and µPC2771T. These IC is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process.