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UPC8112TB - SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE

Datasheet Summary

Description

The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage.

This IC consists of mixer and local amplifier.

Features

  • high impedance output of open collector. Similar ICs of the µPC2757TB and µPC2758TB feature low impedance output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8112TB is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migr.

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Datasheet Details

Part number UPC8112TB
Manufacturer NEC
File Size 125.77 KB
Description SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE
Datasheet download datasheet UPC8112TB Datasheet
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Full PDF Text Transcription

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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8112TB SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The µPC8112TB is a silicon monolithic integrated circuit designed as 1st frequency down-converter for cellular/cordless telephone receiver stage. This IC consists of mixer and local amplifier. The µPC8112TB features high impedance output of open collector. Similar ICs of the µPC2757TB and µPC2758TB feature low impedance output of emitter follower. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your system size. The µPC8112TB is manufactured using NEC’s 20 GHz fT NESAT™III silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes.
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