Datasheet Summary
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUITS
µPC8119T, µPC8120T
VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
DESCRIPTION
The µPC8119T and µPC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to 100 MHz to 1.9 GHz operation, these ICs are suitable for RF transmitter AGC stage of digital cellular telephone. Two types of gain control let users choose in accordance with system design. 3 V supply voltage and mini mold package contribute to make system lower voltage, decreased space and fewer ponents. The µPC8119T and µPC8120T are manufactured using NEC’s 20 GHz fT NESATTM III silicon bipolar process. This...