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UPC8181TB - SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

Datasheet Summary

Description

The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

IC operates at 3 V.

The medium output power is suitable for RF-TX of mobile communications system.

Features

  • Supply voltage.
  • Circuit current.
  • Medium output power.
  • Power gain.
  • Upper limit operating frequency.
  • High-density surface mounting : VCC = 2.7 to 3.3 V : ICC = 23.0 mA TYP. @ VCC = 3.0 V : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1d.

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Datasheet preview – UPC8181TB

Datasheet Details

Part number UPC8181TB
Manufacturer NEC
File Size 263.48 KB
Description SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER
Datasheet download datasheet UPC8181TB Datasheet
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DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8181TB 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
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