Datasheet4U Logo Datasheet4U.com

UPC8181TB - SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER

General Description

The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

IC operates at 3 V.

The medium output power is suitable for RF-TX of mobile communications system.

Key Features

  • Supply voltage.
  • Circuit current.
  • Medium output power.
  • Power gain.
  • Upper limit operating frequency.
  • High-density surface mounting : VCC = 2.7 to 3.3 V : ICC = 23.0 mA TYP. @ VCC = 3.0 V : PO(1dB) = +8.0 dBm TYP. @ f = 0.9 GHz PO(1dB) = +7.0 dBm TYP. @ f = 1.9 GHz PO(1d.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
UPC8187TB SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER CEL
UPC812G2 Operational Amplifier ETC
UPC814C TTL Dual Operational Amplifier ETC
UPC817 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER UTC
UPC8172TB SILICON RFIC 2.5 GHz FREQUENCY UP-CONVERTER CEL

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPC8182TB 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS
UPC8187TB SILICON RFIC HI-IP3 FREQUENCY UP-CONVERTER
UPC8100GR SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS
UPC8101GR 3 V/ SILICON MMIC 150 MHz QUADRATURE MODULATOR
UPC8102T RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8181TB 3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8181TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.