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UPC8182TB Datasheet 3 V/ 2.9 Ghz Silicon Mmic Medium Output Power Amplifier For Mobile Communications

Manufacturer: NEC (now Renesas Electronics)

Overview: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.

General Description

The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

This IC is low current consumption and wide band than µPC2771TB.

This IC is manufactured using NEC’s 25 GHz fT UHS0 silicon bipolar process.

Key Features

  • High-density surface mounting.
  • Supply voltage.
  • Circuit current.
  • Medium output power : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) : VCC = 2.7 to 3.3 V : ICC = 30 mA TYP. @ VCC = 3.0 V : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz.
  • Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz.
  • Upper limit operating frequ.

UPC8182TB Distributor

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