UPC8182TB Description
The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile munications. This IC is low current consumption and wide band than µPC2771TB. This IC is manufactured using NEC’s 25 GHz fT UHS0 silicon bipolar process.
UPC8182TB Key Features
- High-density surface mounting
- Supply voltage
- Circuit current
- Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz
- Upper limit operating frequency : fu = 2.9 GHz TYP. @ 3 dB bandwidth
- Buffer amplifiers on 1.9 GHz to 2.4 GHz mobile munications system