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UPC8182TB - 3 V/ 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS

General Description

The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications.

This IC is low current consumption and wide band than µPC2771TB.

This IC is manufactured using NEC’s 25 GHz fT UHS0 silicon bipolar process.

Key Features

  • High-density surface mounting.
  • Supply voltage.
  • Circuit current.
  • Medium output power : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) : VCC = 2.7 to 3.3 V : ICC = 30 mA TYP. @ VCC = 3.0 V : PO(1dB) = +9.5 dBm TYP. @ f = 0.9 GHz PO(1dB) = +9.0 dBm TYP. @ f = 1.9 GHz PO(1dB) = +8.0 dBm TYP. @ f = 2.4 GHz.
  • Power gain : GP = 21.5 dB TYP. @ f = 0.9 GHz GP = 20.5 dB TYP. @ f = 1.9 GHz GP = 20.5 dB TYP. @ f = 2.4 GHz.
  • Upper limit operating frequ.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC is low current consumption and wide band than µPC2771TB. This IC is manufactured using NEC’s 25 GHz fT UHS0 silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability. FEATURES • High-density surface mounting • Supply voltage • Circuit current • Medium output power : 6-pin super minimold package (2.0 × 1.25 × 0.