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UPC8211TK

Manufacturer: NEC (now Renesas Electronics)

UPC8211TK datasheet by NEC (now Renesas Electronics).

UPC8211TK datasheet preview

UPC8211TK Datasheet Details

Part number UPC8211TK
Datasheet UPC8211TK_NEC.pdf
File Size 1.56 MB
Manufacturer NEC (now Renesas Electronics)
Description SiGe LOW NOISE AMPLIFIER
UPC8211TK page 2 UPC8211TK page 3

UPC8211TK Overview

NEC's UPC8211TK is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and as a general low nois amplifier for mobile munications. The package is 6-pin lead-less minimold (1.5 x 1.3 x 0.55 mm) suitable for surface mount and optimized for very densely populated pact designs. This IC is manufactured using NEC's 60 GHz fTUHS2 (Ultra High Speed Process) silicon bipolar process.

UPC8211TK Key Features

  • LOW NOISE: NF = 1.3 dB TYP
  • HIGH GAIN: GP = 18.5 dB TYP
  • LOW CURRENT CONSUMPTION: ICC = 3.5 mA TYP. at VCC = 3.0 V
  • BUILT-IN POWER SAVE FUNCTION
  • HIGH-DENSITY SURFACE MOUNTING: 6-pin lead less minimold package ( 1.5 x 1.3 x 0.55 mm)
  • Low Noise amplifier for GPS and mobile munications
  • General purpose low noise amplifier
  • 1.5 UPC8211TK S06 TYP 3.5
  • 18.5 1.3 -12 -7.5 -14.5 -32.5
  • 4 +2.0 MAX 4.5 1 21.5 1.5

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