UPC8215TU Datasheet Sige Low Noise Amplifier

Manufacturer: NEC (now Renesas Electronics)

Overview: .. DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8215TU SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE.

Datasheet Details

The µPC8215TU is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile munications.

The package is 8-pin lead-less minimold suitable for surface mount.

This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.

Low noise.
High gain.
Low distortion : NF = 1.3 dB TYP. @ VCC = 3.0 V : GP = 27.0 dB TYP. @ VCC = 3.0 V : OIP3 = +12.5 dBm TYP. @ VCC = 3.0 V.
High-density surface mounting : 8-pin lead-less minimold package (2.0 × 2.2 × 0.5 mm).
High performance with minimum external components.
Output matched to 50 Ω.

Part Number	Description
UPC8211TK	SiGe LOW NOISE AMPLIFIER
UPC824	LOW NOISE J-FET INPUT QUAD OPERATIONAL AMPLIFIER
UPC8001	IF AMPLIFIER IC WITH ON-CHIP MIXER FOR DIGITAL CELLULAR PHONES
UPC8002	SECOND MIXER IF AMPLIFIER FOR DIGITAL CORDLESS TELEPHONES
uPC801	J-FET input operational amplifier
uPC804	J-FET Bipolar Analog Integrated Circuit
UPC805T	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
UPC8100GR	SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS
UPC8101GR	3 V/ SILICON MMIC 150 MHz QUADRATURE MODULATOR
UPC8102T	RF AMPLIFIER IC FOR 150 MHz TO 330 MHz PAGER SYSTEM