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UPC8215TU - SiGe LOW NOISE AMPLIFIER

General Description

The µPC8215TU is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications.

The package is 8-pin lead-less minimold suitable for surface mount.

Key Features

  • Low noise.
  • High gain.
  • Low distortion : NF = 1.3 dB TYP. @ VCC = 3.0 V : GP = 27.0 dB TYP. @ VCC = 3.0 V : OIP3 = +12.5 dBm TYP. @ VCC = 3.0 V.
  • High-density surface mounting : 8-pin lead-less minimold package (2.0 × 2.2 × 0.5 mm).
  • High performance with minimum external components.
  • Output matched to 50 Ω.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8215TU SiGe LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The µPC8215TU is a silicon germanium (SiGe) monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. The package is 8-pin lead-less minimold suitable for surface mount. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process. FEATURES • Low noise • High gain • Low distortion : NF = 1.3 dB TYP. @ VCC = 3.0 V : GP = 27.0 dB TYP. @ VCC = 3.0 V : OIP3 = +12.5 dBm TYP. @ VCC = 3.0 V • High-density surface mounting : 8-pin lead-less minimold package (2.0 × 2.2 × 0.