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UPD2114L-1 Datasheet 4k-bit Static Ram

Manufacturer: NEC (now Renesas Electronics)

Overview: NEe Microputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

4098 BIT (1024 )( 4 BITS) STATIC RAM The NEC I.lPD2114L is a 4096 bit static Random Access Memory organized as 1024 words by 4 bits using N-channeISilicon-gate MOS technology_ It uses fully DC stable (static) circuitry throughout, in both the array and the decoding_ It therefore requires no clocks or refreshing to operate and simplifies system design.

The data is read out nondestructively and has the same polarity as the input data_ mon input/output pins are provided.

II The I.lPD2114L is designed for memory applications where high performance, low cost, large bit storage, and simple interfacing are important design objectives.

Key Features

  • Access Time: Selection from 150-450 ns.
  • Single +5 Volt Supply.
  • Directly TTL Compatible - All Inputs and Outputs.
  • Completely Static - No Clock or Timing Strobe. Required.
  • Low Operating Power - Typically 0.06 mW/8it.
  • Identical Cycle and Access Times.
  • Common Data Input and Output using Three-State Output.
  • High Density 18-pin Plastic and Ceramic Packages.
  • Replacement for 2114L and Equivalent Devices PIN.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD2114L-2 4K-Bit Static RAM
UPD2114L-3 4K-Bit Static RAM
UPD2114L-5 4K-Bit Static RAM
UPD2114L 4K-Bit Static RAM
UPD2118 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY
UPD2118-2 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY
UPD2118-3 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY
UPD2101AL-2 1K-Bit Static MOS RAM
UPD2101AL-4 1K-Bit Static MOS RAM
UPD2102AL-2 1K-Bit Fully Decoded Static MOS RAM

UPD2114L-1 Distributor