Datasheet Details
| Part number | UPD2114L |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 239.39 KB |
| Description | 4K-Bit Static RAM |
| Datasheet | UPD2114L_NEC.pdf |
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Overview: NEe Microputers, Inc. NEe ".PD2114L I'PD2114L·1 I' PD2114L·2 JI. PD2114L·3 JI.
| Part number | UPD2114L |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 239.39 KB |
| Description | 4K-Bit Static RAM |
| Datasheet | UPD2114L_NEC.pdf |
|
|
|
4098 BIT (1024 )( 4 BITS) STATIC RAM The NEC I.lPD2114L is a 4096 bit static Random Access Memory organized as 1024 words by 4 bits using N-channeISilicon-gate MOS technology_ It uses fully DC stable (static) circuitry throughout, in both the array and the decoding_ It therefore requires no clocks or refreshing to operate and simplifies system design.
The data is read out nondestructively and has the same polarity as the input data_ mon input/output pins are provided.
II The I.lPD2114L is designed for memory applications where high performance, low cost, large bit storage, and simple interfacing are important design objectives.
| Part Number | Description |
|---|---|
| UPD2114L-1 | 4K-Bit Static RAM |
| UPD2114L-2 | 4K-Bit Static RAM |
| UPD2114L-3 | 4K-Bit Static RAM |
| UPD2114L-5 | 4K-Bit Static RAM |
| UPD2118 | 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
| UPD2118-2 | 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
| UPD2118-3 | 16384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY |
| UPD2101AL-2 | 1K-Bit Static MOS RAM |
| UPD2101AL-4 | 1K-Bit Static MOS RAM |
| UPD2102AL-2 | 1K-Bit Fully Decoded Static MOS RAM |