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UPD4104-1 Datasheet 4096 X 1 Static Nmos Ram

Manufacturer: NEC (now Renesas Electronics)

Overview: NEe Microcomputers, Inc. NEe p.PD4104 p.PD41 04·1 pPD41 04·2 4096 x 1 STATIC NMOS RAM DEseR IPTION The J.LPD4104 is a high performance 4K static RAM. Organized as 4096 x 1, it uses a combination of static storage cells with dynamic input/output circuitry to achieve high speed and low power in the same device. Utilizing NMOS technology, the J.LPD4104 is fully TTL compatible and operates with a single +5V ± 10% supply.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • ' . FastAccessTime-200ns (J. LPD4104-2).
  • Very Low Stand-By Power - 28 mW Max.
  • Low VCC Data Retention Mode to +3 Volts.
  • Single +5V ±10% Supply.
  • Fully TTL Compatible.
  • Available in 18 Pin Plastic and Ceramic Dual-in-Line Packages.
  • '3 Performance Ranges: II jlPD4104 jlPD4104-1 jlPD4104-2 ACCESS TIME 300 ns 250 ns 200 ns.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
UPD4104-2 4096 x 1 STATIC NMOS RAM
UPD4104 4096 x 1 STATIC NMOS RAM
UPD411 FULLY DECODED RANDOM ACCESS MEMORY
UPD411-1 FULLY DECODED RANDOM ACCESS MEMORY
UPD411-2 FULLY DECODED RANDOM ACCESS MEMORY
UPD411-3 FULLY DECODED RANDOM ACCESS MEMORY
UPD411-4 FULLY DECODED RANDOM ACCESS MEMORY
UPD411A 4096-BIT DYNAMIC RAMS
UPD411A-1 4096-BIT DYNAMIC RAMS
UPD411A-2 4096-BIT DYNAMIC RAMS

UPD4104-1 Distributor