This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | UPD416-1 |
|---|---|
| Datasheet | UPD416-1 UPD416 Datasheet (PDF) |
| File Size | 517.43 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | 16384 x 1 Bit DYNAMIC NMOS RAM |
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18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P. It is designed for memory applications where very low cost and large bit storage are important design objectives. The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| UPD416-1 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-2 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-2 | 16384 x 1 Bit DYNAMIC NMOS RAM |
| UPD416-3 | 16384 x 1 Bit DYNAMIC NMOS RAM |
| UPD416-3 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-5 | 16384 x 1 Bit DYNAMIC NMOS RAM |
| UPD416-5 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD4164 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
| UPD4164-1 | 65536 x 1-BIT DYNAMIC RANDOM ACCESS MEMORY |
