| Part number | UPD416-3 |
|---|---|
| Download | UPD416-3 Datasheet (PDF) |
| File Size | 517.43 KB |
| Manufacturer | NEC |
| Description | 16384 x 1 Bit DYNAMIC NMOS RAM |
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| Part Number | Description |
|---|---|
| UPD416-3 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-1 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-1 | 16384 x 1 Bit DYNAMIC NMOS RAM |
| UPD416-2 | 16K x 1-Bit DYNAMIC NMOS RAM |
| UPD416-2 | 16384 x 1 Bit DYNAMIC NMOS RAM |
18384 x 1 BIT DYNAMIC MOS RANDOM ACCESS MEMORY NEe f' PD416 P. It is designed for memory applications where very low cost and large bit storage are important design objectives. The I1PD416 .is fabr,icated using a double-poly-layer N channel silicon gate process which affords high -storage cell density and high performance.
