Datasheet Summary
NEe Microputers, Inc.
65,536 x 1 BIT DYNAMIC
RANDOM ACCESS MEMORY
NEe
Jo&PD4164-1 ,.,. PD4164-2 J.L PD4164-3
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DESCR I PTI ON
The NEC /lPD4164 is a 65,536 words by 1 bit Dynamic N-Channel MOS RAM designed to operate from a single +5V power supply. The negative-voltage substrate bias is internally generated
- its operation is both automatic and transparent.
The /lPD4164 utilizes a double-poly-layer N-channel silicon gate process which provides high storage cell density, high performance and high reliability.
The /lPD4164 uses a single transistor dynamic storage cell and advanced dynamic circuitry throughout, including the 512 sense amplifiers, which assures that power...