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UPD43257B - 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT

General Description

The µPD43257B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available.

And the µPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity.

Key Features

  • 32,768 words by 8 bits organization.
  • Fast access time: 70, 85 ns (MAX. ).
  • Low VCC data retention: 2.0 V (MIN. ).
  • Two Chip Enable inputs: /CE1, CE2 Part number Access time ns (MAX. ) Operating supply Operating ambient voltage V temperature °C 0 to 70 At operating mA (MAX. ) 45 45 Supply current At standby At data retention µA (MAX. ) 50 15 µA (MAX. ) Note 3 2 µPD43257B-xxL µPD43257B-xxLL 70, 85 4.5 to 5.5 Note TA ≤ 40 °C, VCC = 3.0 V Version X This Data sheet.

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DATA SHEET MOS INTEGRATED CIRCUIT µPD43257B 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT Description The µPD43257B is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM. Battery backup is available. And the µPD43257B has two chip enable pins (/CE1, CE2) to extend the capacity. The µPD43257B is packed in 28-pin plastic DIP and 28-pin plastic SOP. Features • 32,768 words by 8 bits organization • Fast access time: 70, 85 ns (MAX.) • Low VCC data retention: 2.0 V (MIN.) • Two Chip Enable inputs: /CE1, CE2 Part number Access time ns (MAX.) Operating supply Operating ambient voltage V temperature °C 0 to 70 At operating mA (MAX.) 45 45 Supply current At standby At data retention µA (MAX.) 50 15 µA (MAX.) Note 3 2 µPD43257B-xxL µPD43257B-xxLL 70, 85 4.