Description
The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.
Features
- Fully synchronous operation.
- HSTL Input / Output levels.
- Fast clock access time: 2.0 ns / 250 MHz.
- Asynchronous output enable control: /G.
- Byte write control: /SBa (DQa1 to DQa9), /SBb (DQb1 to DQb9), /SBc (DQc1 to DQc9), /SBd (DQd1 to DQd9).
- Common I/O using three-state outputs.
- Internally self-timed write cycle.
- Late write with 1 dead cycle between Read-Write.
- User-configurable outputs: Controlled impedance outpu.
UPD44323362 Datasheet
