Datasheet Summary
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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44323362
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
Description
The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD44323362 is suitable for applications which require high-speed, low voltage, high-density memory and wide bit configuration, such as cache and buffer memory. The µPD44323362 is packaged in a 119-pin PLASTIC BGA (Ball Grid Array).
Features
- Fully synchronous operation
- HSTL Input / Output levels
- Fast clock access time: 2.0 ns / 250 MHz
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