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UPD44323362 - 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM

General Description

The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell.

Key Features

  • Fully synchronous operation.
  • HSTL Input / Output levels.
  • Fast clock access time: 2.0 ns / 250 MHz.
  • Asynchronous output enable control: /G.
  • Byte write control: /SBa (DQa1 to DQa9), /SBb (DQb1 to DQb9), /SBc (DQc1 to DQc9), /SBd (DQd1 to DQd9).
  • Common I/O using three-state outputs.
  • Internally self-timed write cycle.
  • Late write with 1 dead cycle between Read-Write.
  • User-configurable outputs: Controlled impedance outpu.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
UPD44321181 (UPD44321181 / UPD44321361) 32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
UPD44321182 (UPD44321182 / UPD44321362) 32M-BIT ZEROSB SRAM PIPELINED OPERATIO
UPD44321361 (UPD44321181 / UPD44321361) 32M-BIT ZEROSB SRAM FLOW THROUGH OPERATION
UPD44321362 (UPD44321182 / UPD44321362) 32M-BIT ZEROSB SRAM PIPELINED OPERATIO
UPD44324082 36M-BIT DDRII SRAM
UPD44324084 36M-BIT DDRII SRAM
UPD44324085 36M-BIT DDRII SRAM
UPD44324092 36M-BIT DDRII SRAM
UPD44324094 36M-BIT DDRII SRAM
UPD44324095 36M-BIT DDRII SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET MOS INTEGRATED CIRCUIT µPD44323362 32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE Description The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD44323362 is suitable for applications which require high-speed, low voltage, high-density memory and wide bit configuration, such as cache and buffer memory. The µPD44323362 is packaged in a 119-pin PLASTIC BGA (Ball Grid Array). Features • Fully synchronous operation • HSTL Input / Output levels • Fast clock access time: 2.