UPD44323362 Description
The µPD44323362 is a 1,048,576 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD44323362 is suitable for applications which require high-speed, low voltage, high-density memory and wide bit configuration, such as cache and buffer memory. The µPD44323362 is packaged in a 119-pin PLASTIC BGA (Ball Grid Array).
UPD44323362 Key Features
- Fully synchronous operation
- HSTL Input / Output levels
- Fast clock access time: 2.0 ns / 250 MHz
- Asynchronous output enable control: /G
- Byte write control: /SBa (DQa1 to DQa9), /SBb (DQb1 to DQb9), /SBc (DQc1 to DQc9), /SBd (DQd1 to DQd9)
- mon I/O using three-state outputs
- Internally self-timed write cycle
- Late write with 1 dead cycle between Read-Write
- User-configurable outputs: Controlled impedance outputs or push-pull outputs
- Boundary scan (JTAG) IEEE 1149.1 patible