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UPD444012A-X - 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

Datasheet Summary

Description

The µPD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.

The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity.

The µPD444012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).

Features

  • 262,144 words by 16 bits organization 5 5.
  • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX. ).
  • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16).
  • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V).
  • Low VCC data retention: 1.0 V (MIN. ).
  • Operating ambient temperature: TA =.
  • 25 to +85°C.
  • Output Enable input for easy.

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Datasheet Details

Part number UPD444012A-X
Manufacturer NEC
File Size 143.81 KB
Description 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
Datasheet download datasheet UPD444012A-X Datasheet
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DATA SHEET MOS INTEGRATED CIRCUIT µPD444012A-X 4M-BIT CMOS STATIC RAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444012A-X is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. The µPD444012A-X has two chip enable pins (/CE1, CE2) to extend the capacity. The µPD444012A-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent). Features • 262,144 words by 16 bits organization 5 5 • Fast access time: 50, 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention: 1.0 V (MIN.
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