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UPD444016-Y - 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

General Description

The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM.

Operating supply voltage is 5.0 V ± 0.5 V.

The µPD444016-Y is packaged in 44-PIN PLASTIC TSOP (II).

Key Features

  • 262,144 words by 16 bits organization.
  • Fast access time : 8, 10, 12 ns (MAX. ).
  • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16).
  • Output Enable input for easy.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD444016-Y 4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION Description The µPD444016-Y is a high speed, low power, 4,194,304 bits (262,144 words by 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The µPD444016-Y is packaged in 44-PIN PLASTIC TSOP (II). Features • 262,144 words by 16 bits organization • Fast access time : 8, 10, 12 ns (MAX.) • Byte data control : /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Output Enable input for easy application • Single +5.0 V power supply Ordering Information Part number Package Access time ns (MAX.) Supply current mA (MAX.) At operating 220 200 190 At standby 10 µPD444016G5-8Y-7JF µPD444016G5-10Y-7JF µPD444016G5-12Y-7JF 44-PIN PLASTIC TSOP (II) (10.