UPD4443362 Overview
Key Specifications
Package: LQFP
Operating Voltage: 3.3 V
Max Voltage (typical range): 3.465 V
Min Voltage (typical range): 3.135 V
Description
The µPD4443362 is a 131,072 words by 36 bits synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD4443362 is suitable for applications which require synchronous operation, high-speed, low voltage, highdensity memory and wide bit configuration, such as cache and buffer memory.
Key Features
- Fully synchronous operation
- HSTL Input / Output levels 5
- Fast clock access time : 3.8 ns (133 MHz)
- Asynchronous output enable control : /G
- Common I/O using three-state outputs
- Internally self-timed write cycle
- Late write with 1 dead cycle between Read-Write
- 3.3 V (Chip) / 1.5 V (I/O) supply
- 100-pin plastic LQFP package, 14 mm x 20 mm
- Sleep Mode : ZZ (Enables sleep mode, active high)
