NEC UPD4481182
The µPD4481162 is a 524,288-word by 16-bit, the µPD4481182 is a 524,288-word by 18-bit, the µPD4481322 is a 262,144-word by 32-bit and the µPD4481362 is a 262,144-word by 36-bit ZEROSB static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are optimized to eliminate dead cycles for read to write, or write to read transitions.
| Part No. |
UPD4481182 |
| Datasheet |
UPD4481182
Download
|
| Manufacturer |
 NEC |
| Description |
8M-BIT ZEROSB SRAM |
| Buy |
Stock & Price
|
DESCRIPTION
These ZEROSB static RAMs integrate unique synchronous peripheral circuitry, 2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK). The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation. The µPD4481162, µPD4481182, µPD4481322 and µPD4481362 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness for high density and low capacitive loading. FEATURES
● Low voltage core supply : VDD = 3.3 ± 0.165 V (-A44, -A50, -A60, -A75, -A44Y, -A50Y, -A60Y, -A75Y) VDD = 2.5 ± 0.125 V (-C60, -C75, -C60Y, -C75Y...
