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Data Sheet
V850ES/FE3
32-bit Single-Chip Microcontroller Hardware
µPD70F3370A(A) µPD70F3371(A) µPD70F3370A(A1) µPD70F3371(A1) µPD70F3370A(A2) µPD70F3371(A2)
Document No. U18564EE1V2DS00 Date Published March 2008 © NEC Electronics 2008 Printed in Germany
V850ES/FE3 Notes for CMOS Devices
1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity.
UPD70F3370A Datasheet
