UPD70F3371A Overview
U18564EE1V2DS00 Date Published March 2008 © NEC Electronics 2008 Printed in Germany V850ES/FE3 Notes for CMOS Devices 1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when...