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Data Sheet
V850ES/FJ3
32-bit Single-Chip Microcontroller Hardware
µPD70F3378(A) µPD70F3378(A1) µPD70F3378(A2)
µPD70F3379(A) µPD70F3379(A1) µPD70F3379(A2)
µPD70F3380(A) µPD70F3380(A1) µPD70F3380(A2)
µPD70F3381(A) µPD70F3381(A1) µPD70F3381(A2)
µPD70F3382(A) µPD70F3382(A1) µPD70F3382(A2)
Document No. U18567EE1V3DS00 Date Published March 2008 © NEC Electronics 2008 Printed in Germany
Data Sheet U18567EE1V3DS00
2
V850ES/FJ3
Notes for CMOS Devices
1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.