UPG2156TB Datasheet L-band 4 W Single Control High Power Spdt Switch

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET .. GaAs INTEGRATED CIRCUIT µPG2156TB L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT.

Datasheet Details

Part number	UPG2156TB
Manufacturer	NEC (now Renesas Electronics)
File Size	125.17 KB
Description	L-BAND 4 W SINGLE CONTROL HIGH POWER SPDT SWITCH
Datasheet	UPG2156TB_NEC.pdf

The µPG2156TB is an L-band single control SPDT GaAs FET switch which was developed for digital cellular or cordless telephone application.

The device can operate from 800 MHz to 2.5 GHz, having the low insertion loss and high linearity.

Low insertion loss : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1 : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT2 : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz, IN-OUT1/2.
High power switching : Pin (0.1 dB) = 37 dBm TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz, IN-OUT1/2.
6-pin super minimold package (2.1 × 2.0 × 0.9 mm).

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