uPD70F3612A Overview
U19190EE1V0DS00 Date Published March 2008 © NEC Electronics 2008 Printed in Germany V850ES/FE3-L Notes for CMOS Devices 1. Precaution against ESD for semiconductors Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once,...