S7A801830M - 256Kx36 & 512Kx18 Sync-Pipelined Burst SRAM

This page provides the datasheet information for the S7A801830M, a member of the S7A803630M 256Kx36 & 512Kx18 Sync-Pipelined Burst SRAM family.

Product Overview

Part number	S7A801830M
Manufacturer	NETSOL
File Size	477.86 KB
Description	256Kx36 & 512Kx18 Sync-Pipelined Burst SRAM
Datasheet	S7A801830M Datasheet
Additional preview pages of the S7A801830M datasheet.

The S7A803630M and S7A801830M are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance.

VDD = 1.8V (1.7V ~ 2.0V) or 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply.
VDDQ = 1.7V~2.0V I/O Power Supply (VDD=1.8V) or 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V).
Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
Byte Writable Function.
Global Write Enable Controls a f.

Other Datasheets by NETSOL

Published: Oct 13, 2018 |