Description
The S7B163635M and S7B161835M are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance.
Features
- VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply.
- VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or
2.3V~3.5V I/O Power Supply (VDD=3.3V).
- Synchronous Operation.
- Self-Timed Write Cycle.
- On-Chip Address Counter and Control Registers.
- Byte Writable Function.
- Global Write Enable Controls a full bus-width write.
- Power Down State via ZZ Signal.
- LBO Pin allows a choice of either a interleaved burst or a lin-
ear b.
S7B163635M Datasheet
