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S7B323635M - 1Mx36 & 2Mx18 Flow-Trough SRAM

Datasheet Summary

Description

The S7B323635M and S7B321835M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance.

Features

  • VDD = 1.8V (1.7V ~ 2.0V) or 2.5V (2.3V ~ 2.7V) or 3.3V (3.1V ~ 3.5V) Power Supply.
  • VDDQ = 1.7V ~ 2.0V I/O Power Supply (VDD=1.8V) or 2.3V ~ 2.7V I/O Power Supply (VDD=2.5V) or 2.3V ~ 3.5V I/O Power Supply (VDD=3.3V).
  • Synchronous Operation.
  • Self-Timed Write Cycle.
  • On-Chip Address Counter and Control Registers.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.

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Datasheet preview – S7B323635M

Datasheet Details

Part number S7B323635M
Manufacturer NETSOL
File Size 569.19 KB
Description 1Mx36 & 2Mx18 Flow-Trough SRAM
Datasheet download datasheet S7B323635M Datasheet
Additional preview pages of the S7B323635M datasheet.

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Full PDF Text Transcription

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S7B323635M SS77BB332213863355MM S7B321835M 1Mx36 & 2Mx18 Flow-Trough SRAM 1Mx36 & 2Mx18 Flow-Trough SRAM 36Mb Sync. Flow-Trough SRAM Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of NETSOL. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
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