Description
The S7B323635M and S7B321835M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance.
Features
- VDD = 1.8V (1.7V ~ 2.0V) or 2.5V (2.3V ~ 2.7V) or 3.3V (3.1V ~ 3.5V) Power Supply.
- VDDQ = 1.7V ~ 2.0V I/O Power Supply (VDD=1.8V) or 2.3V ~ 2.7V I/O Power Supply (VDD=2.5V) or 2.3V ~ 3.5V I/O Power Supply (VDD=3.3V).
- Synchronous Operation.
- Self-Timed Write Cycle.
- On-Chip Address Counter and Control Registers.
- Byte Writable Function.
- Global Write Enable Controls a full bus-width write.
- Power Down State via ZZ Signal.
S7B323635M Datasheet
