NETSOL S7B323635M
The S7B323635M and S7B321835M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance applications; GW, BW, LBO, ZZ. The S7B323635M and S7B321835M are fabricated using high performance CMOS technology and is available in a 100pin TQFP package and 165FBGA package.| Part No. | S7B323635M |
|---|---|
| Datasheet | S7B323635M Download |
| Manufacturer | NETSOL |
| Description | 1Mx36 & 2Mx18 Flow-Trough SRAM |
| Buy | Stock & Price |
FEATURES
● VDD = 1.8V (1.7V ~ 2.0V) or 2.5V (2.3V ~ 2.7V) or 3.3V (3.1V ~ 3.5V) Power Supply● VDDQ = 1.7V ~ 2.0V I/O Power Supply (VDD=1.8V) or 2.3V ~ 2.7V I/O Power Supply (VDD=2.5V) or 2.3V ~ 3.5V I/O Power Supply (VDD=3.3V)
● Synchronous Operation
● Self-Timed Write Cycle
● On-Chip Address Counter and Control Registers
● Byte Writable Function
● Global Write Enable Controls a full bus-width write
● Power Down State via ZZ Signal
● LBO Pin allows a choice of either a interleaved burst or a lin- ear burst
● Three Chip Enables for simple depth expansion with No Data Contention only for TQFP
● Asynchronous Output Enable Control
● ADSP, ADSC, ADV Burst Control Pins
● TTL-Level Three-State Output
● Operating in commeical and industrial temperature range
● 100-TQFP-1420A (Lead free package)
● 165FBGA(11x15 ball array) with body size of 13mmx15mm. (Lead free package)
GENERAL DESCRIPTION
Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high.
