Click to expand full text
NIKO-SEM
N-Channel Enhancement Mode
P0808ATG
Field Effect Transistor
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
75 8mΩ
ID 89A
D
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current1 Pulsed Drain Current2
TC = 25 °C TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM IAS EAS
PD
Tj, Tstg
LIMITS ±20 89 63 250 85 362 160 80
-55 to 175
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RθJC
Case-to-Heatsink
RθCS
1Pulse width limited by maximum junction temperature. 2Limited by package.
P0808ATG Datasheet
