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P0803BDG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
30V
9.2mΩ @VGS = 10V
60A
TO-252
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain Current Pulsed Drain Current1
TC= 25 °C TC= 100 °C
ID
60 38
IDM
120
Avalanche Current
IAS
35
Avalanche Energy
L=0.1mH
EAS
60
Power Dissipation
TC= 25 °C TC= 100°C
PD
50 20
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
Lead Temperature (1/16” from case for 10 sec.)
TL
275
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1Pulse width limited by maximum junction temperature.
P0803BDG Datasheet
